One-probe Nanoprobing of Power Devices and Electronic Packages
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Webinar Summary
The rapid growth of SiC (Silicon Carbide) devices in the power and automotive industries is driving the need for advanced techniques in semiconductor analysis. Join our exclusive webinar to gain insights into the unique combinations of Electron Beam Induced Current (EBIC) and Passive Voltage Contrast (PVC), and how these methods provide complimentary data essential for thorough junction analysis.
Our speaker, Andrew Elliott will delve into a case study where commercially available SiC MOSFET devices were cross sectioned with a Crossbeam FIB-SEM in preparation for characterisation. The cross sections were then imaged with a Kleindiek MM3E nanoprober, installed in a Sigma SEM on an angled stub, with beam conditions of 1.5 kV to 20 kV with a 60 µm aperture. PVC highlighted the electron affinity or work function of various implant regions of the surface, showing strong contrasts between p and n regions. In contrast, EBIC is an image of the beam current response to electric fields associated with the depletion zones of a p/n junction. Depletion zones were easily characterised in the EBIC data. Overall, this work shows a variety of junction measurements can be easily performed and provide insights for optimization of device performance in compound semiconductors. Register to attend.
What You’ll Learn
- Practical Applications: See real-world applications with a case study on commercially available SiC MOSFET devices, including cross-sectional imaging and analysis.
- Optimization Insights: Learn how these advanced techniques can uncover opportunities to optimize the performance and reliability of SiC devices in your projects.
- Expert Knowledge: Engage with industry experts who will share their hands-on experiences and findings, providing you with valuable takeaways for your work.
Who Should Attend?
- Semiconductor engineers and researchers
- Power electronics professionals
- Automotive industry experts
- Quality control and manufacturing specialists
- Anyone interested in advanced semiconductor technologies
Why Attend?
This webinar is designed for professionals seeking to stay at the forefront of semiconductor technology. Whether you're involved in design, manufacturing, or quality control, this session will provide you with actionable insights that can directly impact your work. Don’t miss this opportunity to learn about the latest techniques in SiC device characterization and optimization.
Andrew Elliott has an extensive background in scanning probe microscopy. He has worked for Carl Zeiss Ltd as a Product & Applications Specialist since 2019, focused on Electron & X-ray microscopy. He previously obtained a masters degree in Chemistry and a PhD in Engineering at the University of Leicester, becoming experienced in the theory and application of various microscopy techniques including laser scanning microscopy, scanning electron microscopy and X-ray CT.