Quick methods for examination of p/n junctions in power devices webinar

Power semiconductors are key components for transportation, electrical grids, and industrial drives. As the reliability of such devices can be affected by such phenomena as overcurrent, desaturation, and avalanche breakdown, it is critical to be able to evaluate junction health and uniformity with simple methods. This webinar will demonstrate the value of analysing power semiconductors in FA with Passive Voltage Contrast (PVC) in the SEM as well as nanoprobing concepts such as Electron Beam Induced Current (EBIC). These techniques in combination examine not only the metallurgical p/n junction but also the corresponding depletion zones of the junction. An experimental method for examining the depletion zones in-situ as the gate bias will also be presented.